SVC224 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Varactor Diode for VCO

Ordering number : ENN6515
SVC224
Diffused Junction Silicon Diode
SVC224
Features
• _{High capacitance ratio.}
• _{Best suited for VCO use.}
Varactor Diode for VCO
Package Dimensions
unit : mm
1184
[SVC224]
4.0
2.2
0.4
0.5
0.4
0.4
1
2
2.6
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature
Symbol
VR
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Breakdown Voltage
Reverse Current
Interterminal Capacitance
Capacitance Ratio
Quality Factor
g : 1MHz signal : 20mVrms
Symbol
V(BR)R
IR
C1.0V
C6.0V
C9.0V
CR
Q
Conditions
IR=10µA
VR=10V
VR=1.0V, f=1MHzg
VR=6.0V, f=1MHz
VR=9.0V, f=1MHz
C1.0V / C9.0V
VR=3.0V, f=100MHz
3.0
3.8nom
1 : Anode
2 : Cathode
SANYO : SPA
Ratings
Unit
16
V
125
°C
−55 to +125
°C
Ratings
Unit
min
max
16
V
50
nA
51.0
76.0
pF
16.0
29.0
pF
9.5
15.5
pF
4.6
5.8
60
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41000 GI IM No.6515-1/3