SVC203C_09 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Diffused Junction Type Silicon Diode Varactor Diode for FM Low-Voltage Electronic Tuning Use

Ordering number : EN2195H
SVC203C
SVC203C
Diffused Junction Type Silicon Diode
Varactor Diode for FM Low-Voltage
Electronic Tuning Use
Features
• Dual type with a good linearity of C-V characteristic. Excels in large input characteristics.
• _{Small-sized package (CP) usable in ultrasmall-sized sets (surface mount type).}
• _{Applicable to FM wide band due to high capacitance ratio (VR=1.5 to 9V).}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature
Symbol
VR
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Breakdown Voltage
Reverse Current
Interterminal Capacitance *
Quality Factor
Capacitance Ratio
Matching Tolerance
* Capacitance value of one diode
Symbol
V(BR)R
IR
C1.0V
C6.0V
C9.0V
Q
CR
ΔCm
Conditions
IR=1μA
VR=10V
VR=1.0V, f=1MHz
VR=6.0V, f=1MHz
VR=9.0V, f=1MHz
VR=3.0V, f=100MHz
C1.0V / C9.0V
VR=1.0V
VR=6.0V
VR=9.0V
(Cmax -- Cmin)
Cmin
✕100
Ratings
Unit
16
V
125
°C
--55 to +125
°C
min
16
Ratings
typ
58.80
18.72
10.84
60
4.6
Unit
max
V
50 nA
65.98 pF
25.11 pF
13.40 pF
6.5
%
5.5
%
11.8
%
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the performance, characteristics, and functions of the described products in the independent state, and are not
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customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
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42209VA MS IM TC-00001954 / 31504 TS IM / O0397 GI / 52595 GI (KOTO) 1200 MO / O268 MO / 6187 AT, TS 8-9952 No.2195-1/4