SVC203CP Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Varactor Diode for FM Low-Voltage Electronic Tuning Use

Ordering number : EN2195F
Diffused Junction Type Silicon Diode
SVC203CP
Varactor Diode for FM Low-Voltage
Electronic Tuning Use
Features
• Dual type with a good linearity of C-V characteristic. Excels in large input characteristics.
• Small-sized package (CP) usable in ultrasmall-sized sets (surface mount type).
• Applicable to FM wide band due to high capacitance ratio (VR=1.5 to 9V).
Absolute Maximum Ratings at Ta=25°C
Reverse Voltage
VR
Junction Temperature
Tj
Storage Temperature
Tstg
unit
16 V
125 °C
–55 to +125 °C
Electrical Characteristics at Ta=25°C
min typ max unit
Breakdown Voltage
V(BR)R IR=1µA
16
V
Reverse Current
IR
VR=10V
50 nA
Interterminal Capacitance*
C1.0V VR=1.0V, f=1MHz
58.80
65.98 pF
C6.0V VR=6.0V, f=1MHz
18.72
25.11 pF
C9.0V VR=9.0V, f=1MHz
10.84
13.40 pF
Quality Factor
Q
VR=3.0V, f=1MHz
60
Capacitance Ratio
Matching Tolerance
CR
∆Cm
C1.0V/C9.0V
4.6
VR=1.0V
VR=6.0V
VR=9.0V
(Cmax |Cmin)
Cmin
×100
6.5
%
5.5
%
11.8
%
* : Capacitance value of one diode
Electrical Connection
Package Dimensions 1169A
(unit : mm)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O0397GI/52595GI (KOTO)1200MO/O268MO/6187AT, TS 8-9952 No.2195-1/3