SPM0103A Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Low-Noise GaAs Amplifier MMIC

Ordering number : EN5563
GaAS MMIC
SPM0103A
Low-Noise GaAs Amplifier MMIC
Features
• Low-voltage, low-current operation
• Compact mini-mold package
• No matching circuits needed for I/O
• Low noise
• Ideal for use as first stage for mobile communications
receiver amplifier
Package Dimensions
unit: mm
7272-CP5
[SPM0103A]
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Power supply voltage
Gate voltage
Allowable power dissipation
Operating temperature
Storage temperature
Junction temperature
Symbol
V_DD
V_G
P_D
Topr
Tstg
Tj
Conditions
V_DD = 3 V, I_D = 60 mA or less
Electrical Characteristics at Ta = 25°C
Parameter
Drain current t
Noise figure
Linear gain
VSWR (input)
VSWR (output)
Individual component name indication: MJ
Symbol
Conditions
I_D
V_DD = 3 V, V_G = 0
NF V_DD = 3 V, I_D = 25 mA, f = 1.9 GHz
G_L V_DD = 3 V, I_D = 25 mA, f = 1.9 GHz
V_DD = 3 V, I_D = 25 mA, f = 1.9 GHz
V_DD = 3 V, I_D = 25 mA, f = 1.9 GHz
SANYO: CP5
Ratings
Unit
5
V
–2
V
0.25
W
–30 to +90
°C
–55 to +150
°C
150
°C
min
50
Ratings
typ
70
1.1
12
2.1
2.1
Unit
max
95 mA
1.5
dB
dB
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
N3096HA(OT) No. 5563-1/2