SPI-336-99-T1 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Ultraminiature photoreflector supporting reflow soldering Single transistor type

Ordering number : EN6030
SPI-336-99-T1
Infrared LED
SPI-336-99-T1
Ultraminiature photoreflector supporting reflow soldering
(Single transistor type)
Features
• Infrared LED plus Phototransistor (single)
• DIP type
• Compact type : 3.4 (L) ! 2.7 (W) ! 1.5 (H) mm
• Visible light cut type
• Taping type
Absolute Maximum Ratings at Ta=25°C, 65%RH (as per JIS C7032)
Input LED
Output
Phototransistor
Parameter
Forward Current
Reverse Voltage
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Curren
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
Rating
Unit
I_F
50
mA
V_R
5
V
P_D
70
mW
V_CEO
20
V
V_ECO
5
V
I_C
20
mA
P_C
70
mW
Topr
--20 to +80
°C
Tstg
--30 to +100
°C
Electro-Optical Characteristics at Ta=25°C, 65%RH
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Input
Forward Voltage
V_F I_F=10mA
1.0
Reverse Current
I_R V_R=5V
--
Output Dark Current
I_CEO I_F=0mA, V_CE=10V
--
Collector Output
I_C
I_F=10mA,V_CE=5V ^*1
80
Leakage Current
I_LEAK I_F=10mA,V_CE=5V ^*2
--
Coupled ^{Collector Emitter}
Rise Time
Fall Time
VCE(sat) IF=10mA, IC=50µA
--
tr
V_CC=5V, R_L=100Ω
--
tf
I_C=1mA
--
*1 _{Location of reflector is shown in Fig. 1.}
1.2
1.6
V
--
10
µA
--
200
nA
--
1100
µA
--
1
µA
--
0.5
V
5
--
µs
5
--
µs
*2 _{No reflector}
*3 _{Table of Classification of Collector Output}
Class
A
B
C
Ic (µA) 1100 to 450 600 to 260 350 to 150
D
200 to 80
AL V.E. film
Glass plate (t=1mm)
Fig. 1 Location of Reflector
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72199 GI, (MI) No.6030 1/6