SPI-335-34 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Ultraminiature photoreflector (single-transistor type)

Ordering number : EN6029
SPI-335-34
Infrared LED
SPI-335-34
Ultraminiature photoreflector
(single-transistor type)
Features
• Infrared LED plus Phototransistor (single)
• DIP type
• Compact type : 3.4 (L) ! 2.7 (W) ! 1.5 (H) mm
• Visible light cut type
• Lead length : (L=3.5mm)
Absolute Maximum Ratings at Ta=25°C, 65%RH
Parameter
Symbol
Rating
Unit
Forward Current
I_F
50
mA
Input LED
Reverse Voltage
Power Dissipation
V_R
5
V
P_D
70
mW
Collector-Emitter Voltage
V_CEO
20
V
Output
Emitter-Collector Voltage
V_ECO
5
V
Phototransistor
Collector Curren
I_C
20
mA
Power Dissipation
Operating Temperature
P_C
70
mW
Topr
--20 to +80
°C
Storage Temperature
Soldering Temperature ^*1
Tstg
--40 to +100
°C
Tsol
260
°C
*1 _{Soldering conditions : time : max. 3sec; clearance : min. 1mm from lower case edge.}
Electro-Optical Characteristics at Ta=25°C, 65%RH
Parameter
Symbol
Condition
Input
Output
Forward Voltage
Reverse Current
Dark Current
Collector Output Current
Leakage Current
V_F
I_R
I_CEO
I_C
I_LEAK
I_F=10mA
V_R=5V
I_F=0mA, V_CE=10V
I_F=4mA, V_CE=5V ^*1
I_F=10mA, V_CE=5V ^*2
Coupled ^{Collector Emitter}
Saturation Voltage
V_CE(sat) I_F=10mA, I_C=50µA
Rise Time
tr
Fall Time
tf
*1 _{Location of reflector is show in Fig. 1.}
*2 _{No reflector}
V_CC=5V, R_L=100Ω
I_C=1mA
*3 _{Table of Classification of Collector Output}
Class
Ic (µA)
E
F
180 to 110 140 to 80
G
100 to 50
H
65 to 33
Marking color Orange
Green
White
Silver
Min. Typ. Max. Unit
1.0
1.2
1.6
V
--
--
10
µA
--
10
200
nA
33
--
180
µA
--
--
1
µA
--
--
0.5
V
--
5
--
µs
--
5
--
µs
AL V.E. film
Glass plate (t : 1mm)
Fig. 1 Location of Reflector
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72199 GI, (MI) No.6029 1/6