SPI-238-18 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Ultraminiature photointerrupter (single-transistor type)

Ordering number : EN6026
SPI-238-18
GaAs Infrared LED
SPI-238-18
Ultraminiature photointerrupter
(single-transistor type)
Features
• GaAs Infrared LED plus Single Phototransistor
• Photo-Interrupter
• Contact type
• Compact type : H4.95 ! L6.0 ! W5.5mm
Absolute Maximum Ratings at Ta=25°C, 65%RH
Parameter
Symbol
Rating
Unit
Forward Current
I_F
50
mA
Input LED
Reverse Voltage
Power Dissipation
V_R
5
V
P_D
70
mW
Collector-Emitter Voltage
V_CEO
20
V
Output
Emitter-Collector Voltage
V_ECO
5
V
Phototransistor
Collector Curren
I_C
20
mA
Power Dissipation
Operating Temperature
P_C
70
mW
Topr
--20 to +80
°C
Storage Temperature
Tstg
--30 to +85
°C
Soldering Temperature ^*1
Tsol
260
°C
*1 _{Soldering conditions : time : max. 3sec; clearance : min. 1mm from lower stay}
Electro-Optical Characteristics at Ta=25°C, 65%RH
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Input
Forward Voltage
Reverse Current
V_F I_F=10mA
I_R V_R=5V
1.0
1.15
1.4
V
--
--
10
µA
Output Dark Current
I_CEO I_F=0mA, V_CE=10V
--
10
200
nA
Collector Output Current
I_C
I_F=10mA, V_CE=5V ^*1
40
200
400
µA
Coupled
Collector Emitter
Saturation Voltage
V_CE(sat) I_F=10mA, I_C=20µA
--
--
0.5
V
Rise Time
Fall Time
tr
V_CC=5V, R_L=100Ω
--
10
--
µs
tf
I_C=1mA
--
10
--
µs
*1 _{Measurement Circuit of Collector Current}
VCE=5V
IF=10mA
Ic
A
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72199 GI, (MI) No.6026 1/6