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SPI-236-17 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Ultraminiature photointerrupter (single-transistor type)
Ordering number : EN6025
SPI-236-17
GaAs Infrared LED
SPI-236-17
Ultraminiature photointerrupter
(single-transistor type)
Features
• GaAs Infrared LED plus Single Phototransistor
• Photo-Interrupter
• Contact type
• Compact type : H3.25 ! L5.0 ! W4.5mm
• Application : For the general public welfare
Absolute Maximum Ratings at Ta=25°C, 65%RH (as per JIS C 7032 )
Parameter
Symbol
Rating
Unit
Forward Current *1
IF
50
mA
Input LED
Reverse Voltage
Power Dissipation
VR
5
V
PD
70
mW
Collector-Emitter Voltage
VCEO
20
V
Output
Emitter-Collector Voltage
VECO
5
V
Phototransistor
Collector Curren
IC
20
mA
Power Dissipation
Operating Temperature
PC
70
mW
Topr
--20 to +80
°C
Storage Temperature
Soldering Temperature *2
Tstg
--30 to +85
°C
Tsol
260
°C
*1 See forward current derating
*2 Soldering conditions : time : max. 3sec; clearance : min. 1mm from lower stay
Electro-Optical Characteristics at Ta=25°C, 65%RH
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Input
Forward Voltage
Reverse Current
VF IF=10mA
IR VR=5V
1.0
1.15
1.4
V
--
--
10
µA
Output Dark Current
ICEO IF=0mA, VCE=10V
--
10
200
nA
Collector Output Current
IC
IF=10mA, VCE=5V *1
240
500
880
µA
Coupled
Collector Emitter
Saturation Voltage
VCE(sat) IF=10mA, IC=50µA
--
--
0.5
V
Rise Time
Fall Time
tr
VCC=5V, RL=100Ω
--
5
--
µs
tf
IC=1mA
--
5
--
µs
*1 Measurement Circuit of Collector Current
VCE=5V
*2 Table of Classification of Collector Output
IF=10mA
Ic
A
Class
Ic (µA)
A
B
C
880 to 460 635 to 330 460 to 240
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72199 GI, (MI) No.6025 1/6