SGF35 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – For C to Ku-Band Local Oscillator and Amplifier

Ordering number : ENN7926
SGF35
SGF35
N-Channel GaAs MESFET
For C to Ku-Band Local Oscillator and
Amplifier
Features
• Lower Phase Noise.
• Highly reliable protection film.
• _{Automatic surface mounting supported.}
• _{MCPH4 package.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
Tj
Tstg
Conditions
Mounted on copper foil (area : 0.96mm²)
Glass epoxy board (145!80!1.6mm)
Electrical Characteristics at Ta=25°C
Parameter
Gate-to-Source Leakage Current
Saturated Drain Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
IGSO
IDSS
VGS(off)
^yfs
Conditions
VGS=--5V
VDS=3V, VGS=0
VDS=3V, ID=100µA
VDS=3V, ID=10mA
Ratings
Unit
6
V
--5
V
100 mA
400 mW
150
°C
--55 to +150
°C
Ratings
Unit
min
typ
max
--10 µA
30
50
70 mA
--0.5
--1.6
--2.7
V
34
mS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33004SG TS IM TA-101124 No.7926-1/5