SGF25 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – For C- to X-band local oscillator and amplifier

Ordering number : EN5820
N-Channel GaAs MESFET
SGF25
For C- to X-band local oscillator and amplifier
Features
• Super miniaturized plastic-mold package(CP4).
• High reliability achieved by original manufacturing
technology(adopting a protection coat).
• Available for surface mounting and automatic inserting.
Package Dimensions
unit: mm
2134A
[SGF25]
1 : Gate
2 : Source
3 : Drain
4 : Source
SANYO: CP4
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Dissipation power
Junction temperature
VDS
VGS
ID
PD
Tj
Storage temperature
Tstg
Conditions
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Minimum noise figure
Associated gain
Maximum available gain
V(BR)GSO
IDSS
VGS(off)
|Yfs|
NFmin
Ga
MAG
IGS=–10µA
VDS=3V, VGS=0
VDS=3V, ID=100µA
VDS=3V, ID=10mA
VDS=3V, ID=10mA
f=12GHz
Ratings
Unit
6.0
V
–5.0
V
100 mA
200 mW
150
°C
–55 to +150
°C
Ratings
Unit
min typ max
–5.0
V
30
45
65 mA
–0.5 –1.5 –3.0 V
40
mS
2.5
dB
5.5
dB
7.0
dB
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O2097GI (KOTO) TA-1290 No.5820-1/3