SGD102 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – C to X Band, Mixer, Modulator Applications

Ordering number :EN5581
SGD102
GaAs Schottky Barrier Diode
C to X Band, Mixer, Modulator Applications
Features
· Ultrasmall-sized package.
· Less parasitic components, conversion loss.
Package Dimensions
unit:mm
1276
[SGD102]
1:No Contact
2:Anode
3:Cathode
Specifications
Absolute Maximum Ratings at Ta = 25˚C
SANYO:CP3R
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Current
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFM
IO
Tj
Tstg
Conditions
Ratings
Unit
4.5 V
4.0 V
150 mA
50 mA
150 ˚C
–55 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Forward Voltage
Reverse Voltage
Interterminal Capacitance
Series Resistance
Conversion Loss
Symbol
Conditions
VF
IF=20mA
VR
IR=10µA
Ct
V=0V, f=1MHz
RS
IF=20mA
LC
Measured using the DC incremental methode*
f=10.678GHz, P=10mW
Ratings
Unit
min typ max
0.8
0.9 V
4.0
6.0
V
0.3
0.4 pF
1.5
3.0 Ω
4.0
dB
Note)*: Conversion loss measurement diagram
For measurement of conversion loss, do a sampling from the lot population and use the DC incremental
method for measurement.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/D1096GI/ (KOTO) X-8179 No.5581-1/2