SGD-100T Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – C to X Band, Mixer, Modulator Applications

Ordering number :EN3170A
SGD-100T
GaAs Schottky Barrier Diode
C to X Band, Mixer, Modulator Applications
Features
· Very small-sized ceramic package.
· Less parasitc components, conversion loss.
Package Dimensions
unit:mm
1235A
[SGD-100T]
Specifications
Absolute Maximum Ratings at Ta = 25˚C (Per element)
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Current
Junction Temperature
Storage Temperature
Mounting Temperature
Symbol
VRM
VR
IFM
IO
Tj
Tstg
Tm
10ns
Electrical Characteristics at Ta = 25˚C (Per element)
Parameter
Forward Voltage
Reverse Voltage
Interterminal Capacitance
Series Resistance
Electrical Connection
Symbol
VF
IF=20mA
VR
IR=10µA
Ct
V=0V, f=1MHz
RS
IF=20mA
Conditions
Conditions
1:Cathode
2:Anode
3:Common
(Top view)
1:Cathode
2:Anode
3:Common
SANYO:CP
Ratings
Unit
4.5 V
4V
150 mA
50 mA
150 ˚C
–55 to +150 ˚C
230 ˚C
Ratings
Unit
min typ max
0.8
0.9 V
4.0
6.0
V
0.3
0.4 pF
1.5
3.0 Ω
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41098HA (KT)/90694MO/8-6953/O259MO, TS No.3170-1/2