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SCH2602 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
Ordering number : ENN8323
SCH2602
SCH2602
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• The SCH2602 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON- resistance
and high-speed switching, thereby enabling high-density mounting.
• Low ON-resistance.
• 2.5V drive (N-ch), 1.8V drive (P-ch).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Marking : FB
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=80mA
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
N-channel
P-channel
Unit
30
--12
V
±10
±10
V
0.35
--1.5
A
1.4
--6
A
0.6
W
150
°C
--55 to +150
°C
Ratings
Unit
min
typ
max
30
V
10 µA
±10 µA
0.4
1.3
V
130
220
mS
2.9
3.7
Ω
3.7
5.2
Ω
6.4
12.8
Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005PE MS IM TA-100972 No.8323-1/6