SBE818-TL-E Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – 30V, 2.0A Rectifier

Ordering number : ENA1379A
SBE818
SANYO Semiconductors
DATA SHEET
SBE818
Low IR Schottky Barrier Diode
30V, 2.0A Rectifier
Applications
• _{High frequency rectification (switching regulators, converters, choppers)}
Features
• _{Composite type device with 2 low IR SBD shoused in one package, facilitating high density mounting}
• _{Small switching noise}
• _{Low forward voltage (IF=2.0A, VF max=0.62V)}
• _{Low reverse current (VR=15V, IR max=7.5μA)}
• _{Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm)}
Specifications
Absolute Maximum Ratings at Ta=25°C (Value per element)
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
Nonrepetitive Peak Reverse Surge Voltage V_RSM
Average Output Current
I_O
Surge Forward Current
Junction Temperature
I_FSM
Tj
When mounted on ceramic substrate, Rectangular wave 180°C
When mounted on glass epoxy substrate
50Hz sine wave, 1 cycle
30
V
30
V
2.0
A
1.5
A
20
A
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
*: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8),
and between Terminal 3 and Terminal 5 (or 6)
Package Dimensions
unit : mm (typ)
7045-004
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
0.2
8
5
0.125 ^SBE818-TL-E
Packing Type : TL
Marking
1
4
0.5
2.0
1 : Anode1
2 : NC
3 : Anode2
4 : Anode2(NC)
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
SANYO : EMH8
SC
TL
Lot No.
Electrical Connection
8765
1234
*: Terminal 4 is used for the
purposes such as test. Al-
though it is connected to
Anode 2, please handle it
as NC Terminal.
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