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SBE602 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Schottky Barrier Diode (Twin Type Cathode Common) 30V, 70mA Rectifier
Ordering number : EN8965
SBE602
SANYO Semiconductors
DATA SHEET
SBE602
Schottky Barrier Diode (Twin Type • Cathode Common)
30V, 70mA Rectifier
Applications
• High frequency rectification (switching regulators, converters, choppers).
Features
• Low forward voltage (VF max=0.55V).
• Fast reverse recovery time (trr max=10ns).
• Low switching noise.
• Low leakage current and high reliability due to highly reliable planar structure.
• Ultrasmall-sized package permitting SBE602-applied sets to be made small and slim.
Absolute Maximum Ratings at Ta=25°C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta=25°C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Therrmal Resistance
Marking : SQ
Symbol
VR
VF
IR1
IR2
C
trr
Rth(j-a)
Conditions
IR=20µA
IF=70mA
VR=2V
VR=15V
VR=10V, f=1MHz
IF=IR=10mA, See specified Test Circuit.
Mounted in Cu-foiled area of 0.72mm2!0.03mm
on glass epoxy board
Ratings
Unit
30
V
35
V
70
mA
2
A
--55 to +125
°C
--55 to +125
°C
min
30
Ratings
typ
5.5
300
Unit
max
V
0.55
V
75
nA
5.0
µA
pF
10
ns
°C / W
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1806SB SY IM TC-00000234 No.8965-1/3