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SB80W10T_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – 100V, 8A Rectifier
Ordering number : ENA1817A
SB80W10T
SANYO Semiconductors
DATA SHEET
SB80W10T
Schottky Barrier Diode (Twin Type • Cathode Common)
100V, 8A Rectifier
Features
• VF max=0.8V
• IR max=0.1mA
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Note) *1. Indicates the total value
*2. Value per element
Symbol
VRRM
VRSM
IO*1
IO*2
IFSM
Tj
Tstg
Conditions
50Hz resistive load, sine wave Tc=62°C
50Hz resistive load, sine wave Tc=121°C
50Hz sine wave, 1 cycle
Ratings
Unit
100
V
105
V
8
A
4
A
40
A
--55 to +150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7518-001
Package Dimensions
unit : mm (typ)
7003-002
6.5
2.3
6.5
5.0
0.5 SB80W10T-H
5.0
4
4
2.3
0.5
SB80W10T-TL-H
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Anode
2 : Cathode
3 : Anode
4 : Cathode
SANYO : TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Anode
2 : Cathode
3 : Anode
4 : Cathode
SANYO : TP-FA
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
S80W
10
LOT No.
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
1
3
TL
2
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80812 TKIM/O2710SB TKIM TC-00002519 No. A1817-1/7