SB10W05Z Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 50V, 1A Rectifier

Ordering number : EN3876A
Schottky Barrier Diode (Twin Type · Cathode Common)
SB10W05Z
50V, 1A Rectifier
Applications
• High frequency rectification (switching regulators, converters, choppers).
Features
• Low forward voltage (V_F max=0.55V).
• Fast reverse recovery time (trr max=10ns).
• Low switching noise.
• Low leakage current and high reliability due to highly reliable planar structure.
Absolute Maximum Ratings at Ta=25°C (Value per element)
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse
Surge Voltage
V_RRM
V_RSM
Average Output Current
Io
Surge Forward Current
Junction Temperature
I_FSM
Tj
50Hz sine wave, 1 cycle
Storage Temperature
Tstg
unit
50 V
55 V
1A
10 A
–55 to +125 °C
–55 to +125 °C
Electrical Characteristics at Ta=25°C (Value per element)
Reverse Voltage
Forward Voltage
Reverse Current
V_R
I_R=300µ A
V_F
I_F=1A
I_R
V_R=25V
Interterminal Capacitance
c
V_R=10V, f=1MHz
Reverse Recovery Time
trr
I_F=I_R=100mA
See specified Test Circuit.
Thermal Resistance
Rthj-a
min typ max unit
50
V
0.55
V
80 µA
52
pF
10
ns
75
°C/W
trr Test Circuit
Package Dimensions 1243A
(unit : mm)
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O0797GI/42297YH (KOTO) 8-7461 No.3876-1/2