SB10W05P Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 50V, 1A Rectifier

Ordering number:EN4170A
SB10W05P
Schottky Barrier Diode (Twin Type · Cathode Common)
50V, 1A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=10ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1222A
[SB10W05P]
1:Anode
2:Cathode
3:Anode
Specifications
Absolute Maximum Ratings at Ta = 25˚C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
· Marking:SL
trr Test Circuit
Symbol
Conditons
VR
VF
IR
C
trr
Rth(j-a) (1)
IR=300µA
IF=1A
VR=25V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Rth(j-c) (2) Mounted on 250mm²Ã—0.8mm ceramic board
Electrical Connection
SANYO:PCP
(Bottom view)
Ratings
Unit
50 V
55 V
1A
10 A
–55 to +125 ˚C
–55 to +125 ˚C
Ratings
min
typ
50
52
280
100
max
0.55
80
10
Unit
V
V
µA
pF
ns
˚C/W
˚C/W
1:Anode
2:Cathode
3:Anode
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
43098HA (KT)/53196GI/42294YH (KOTO) 8-7182 No.4170-1/2