SB02-09NP Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 90V, 200mA Rectifier

Ordering number :EN1924B
SB02-09NP
Shottky Barrier Diode
90V, 200mA Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.7V).
· Fast reverse recorvery time (trr max=10ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1157A
[SB02-09NP]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
JEDEC:TO-92
EIAJ:SC-43
SANYO:NP
1:Anode
2:Cathode
3:No Contact
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
50Hz, resistive load, Ta=88˚C
50Hz sine wave, 1cycle
Ratings
Unit
90 V
95 V
200 mA
5A
–55 to +125 ˚C
–55 to +125 ˚C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recorvery Time
Thermal Resistance
ttr Test Circuit
Symbol
Conditions
VR
VF
IR
C
trr
Rthj-a
IR=200µA
IF=200mA
VR=45V
VR=–10V, f=1MHz
IF=IR=10mA, See specified Test Circuit
Ratings
min
typ
90
11
165
max
0.7
50
10
Unit
V
V
µA
pF
ns
˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/41096GI (KOTO)/2079MO/O255KI, TS No.1924-1/2