RE0208M Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Fast Recovery Diode for Flash Circuit 800V, 200mA Rectifi er

Ordering number : ENA1640
RE0208M
SANYO Semiconductors
DATA SHEET
RE0208M
Fast Recovery Diode for Flash Circuit
800V, 200mA Rectifier
Applications
• _{Voltage rectification for flash circuit etc.}
Features
• _{High voltage (VRRM=800V).}
• _{Reverse recovery time is fast.}
• _{Ultrasmall-size package permitting applied sets to be small and slim.}
• _{Halogen free compliance.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
I_O
I_FSM
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
DC.When mounted on ceramic substrate
50Hz sine wave, 1 cycle
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Marking : 2B
Symbol
VR
VF1
VF2
IR1
IR2
IR=1mA
IF=10mA
IF=100mA
VR=400V
VR=800V
Conditions
Ratings
Unit
800
V
800
V
0.2
A
1
A
--55 to +150
°C
--55 to +150
°C
min
800
Ratings
Unit
typ
max
V
1.3
1.6
V
3.2
4.0
V
3
μA
50
μA
Continued on next page.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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11310SC TK IM TC-00002241 No. A1640-1/3