RD2006RH-SB Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Diode

Ordering number : EN9054
RD2006RH-SB
SANYO Semiconductors
DATA SHEET
RD2006RH-SB ^{Diffused Junction Silicon Diode}
Ultrahigh-Speed Switching Diode
Features
• _VRRM=600V
• _{VF=1.75V max. (IF=20A)}
• _{trr=21ns (typ.)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
Average Output Current
R.M.S Forward Current
Surge Forward Current
Junction Temperature
VRRM
I_O
I_F(RMS)
I_FSM
Tj
DC bias
50Hz resistive load, Sine wave Tc=63°C
Tc=25°C (SANYO’s ideal heat dissipation condition) *, Package limited, DC
50Hz Sine wave, 1 pulse
600
V
20
A
30
A
220
A
150
°C
Storage Temperature
Tstg
--55 to +150
°C
*. SANYO’s condition is radiation from backside
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium
Package Dimensions
unit : mm (typ)
7534-001
3.4
16.0
5.6
3.1
Product & Package Information
• Package
: TO-3PMLH
• JEITA, JEDEC
: SC-93, TO-247, SOT-199
• Minimum Packing Quantity : 100 pcs./tray
Marking
Electrical Connection
2
2.8
2.0
2.1
0.7
0.9
RD2006
LOT No.
1
5.45
5.45
123
5.45
5.45
1 : Cathode
3 : Anode
SANYO : TO-3PMLH-SB
http://semicon.sanyo.com/en/network
60811SA TKIM TC-00002614 No.9054-1/3