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RD2004JS-SB Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Diode
Ordering number : ENA1895
RD2004JS-SB
SANYO Semiconductors
DATA SHEET
RD2004JS-SB Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
Features
• VF=1.5V max. (IF=20A)
• VRRM=400V
• trr=20ns (typ.)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Non-repeated Peak Reverse Surge Voltage
Average Output Current
R.M.S Forward Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IF(RMS)
IFSM
Tj
Tstg
Conditions
DC bias
PW≤100μs, duty ≤ 0.1
50Hz resistive load, Sine wave Tc=41°C
Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited, DC
50Hz sine wave 1pulse
Ratings
Unit
400
V
430
V
20
A
23
A
180
A
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7533-001
10.0
3.2
4.5
2.8
Product & Package Information
• Package
: TO-220ML(LS)
• JEITA, JEDEC
: SC-67, SOT-186A
• Minimum Packing Quantity
: 100 pcs./bag, 50 pcs./magazine
Marking
Electrical Connection
2
1.6
1.2
2
0.75
0.7
RD2004
LOT No.
1
13
2.55
2.55
1 : Cathode
2 : Anode
SANYO : TO-220ML(LS)-SB
http://semicon.sanyo.com/en/network
10511SA TKIM TC-00002483 No. A1895-1/3