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RD2003JS-SB Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Diode | |||
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Ordering number : ENA1904
RD2003JS-SB
SANYO Semiconductors
DATA SHEET
RD2003JS-SB Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
Features
⢠VF=1.3V max. (IF=20A)
⢠VRRM=300V
⢠trr=20ns (typ.)
Speciï¬cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Non-repeated Peak Reverse Surge Voltage
Average Output Current
R.M.S Forward Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IF(RMS)
IFSM
Tj
Tstg
Conditions
DC bias
PWâ¤100μs, duty ⤠0.1
50Hz resistive load, Sine wave Tc=38°C
Tc=25°C (SANYOâs ideal heat dissipation condition) Package limited, DC
50Hz sine wave 1pulse
Ratings
Unit
300
V
350
V
20
A
25
A
180
A
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7533-001
10.0
3.2
4.5
2.8
Product & Package Information
⢠Package
: TO-220ML(LS)
⢠JEITA, JEDEC
: SC-67, SOT-186A
⢠Minimum Packing Quantity
: 100 pcs./bag, 50 pcs./magazine
Marking
Electrical Connection
2
1.6
1.2
2
0.75
0.7
RD2003
LOT No.
1
13
2.55
2.55
1 : Cathode
2 : Anode
SANYO : TO-220ML(LS)-SB
http://semicon.sanyo.com/en/network
10511SA TKIM TC-00002482 No. A1904-1/3
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