RD1004LS-SB5 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Diffused Junction Type Silicon Diode Ultrahigh-Speed Switching Diode

Ordering number : ENA1615
RD1004LS-SB5
SANYO Semiconductors
DATA SHEET
RD1004LS-SB5
Diffused Junction Type Silicon Diode
Ultrahigh-Speed Switching Diode
Features
• _{High breakdown voltage (VRRM=400V).}
• _{High reliability.}
• _{Easy to be mounted, good heat dissipation.}
• _{Fast reverse recovery time.}
• _{Low noise at the time of reverse recovery.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Output Current
R.M.S Forward Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
I_O
I_F(RMS)
I_FSM
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited
Sine wave, 10ms single pulse
Ratings
Unit
400
V
400
V
10
A
12
A
120
A
150
°C
--55 to +150
°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
trr1
trr2
Rth(j-c)
Conditions
IR=1mA
IF=10A
VR=400V
IF=10A, di / dt=100A/μs
IF=0.5A, IR=1A
Between the junction part and the case : smoothing current
min
400
Ratings
typ
1.3
44
17
max
1.5
100
50
6.25
Unit
V
V
μA
ns
ns
°C / W
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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N1809SA TK IM TC-00002177 No. A1615-1/3