RD0506T_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode

Ordering number : ENA1574B
RD0506T
SANYO Semiconductors
DATA SHEET
RD0506T
Diffused Junction Silicon Diode
Low VF ^• High-Speed Switching Diode
Features
• _{High breakdown voltage (VRRM=600V)}
• _{Low noise at the time of reverse recovery}
• _{Halogen free compliance}
• _{Fast reverse recovery time}
• _{Low forward voltage (VF max=1.6V)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
I_O
I_FSM
Tj
Tstg
Conditions
Sine wave 10ms, 1 cycle
Ratings
Unit
600
V
5
A
80
A
150
°C
--55 to +150
°C
Package Dimensions unit : mm (typ)
7518-002
6.5
2.3
5.0
0.5 ^RD0506T-H
4
Package Dimensions unit : mm (typ)
7003-001
6.5
2.3
5.0
0.5
RD0506T-TL-H
4
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : No Contact
2 : Cathode
3 : Anode
4 : Cathode
SANYO : TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : No Contact
2 : Cathode
3 : Anode
4 : Cathode
SANYO : TP-FA
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Marking
(TP, TP-FA)
R0506
Packing Type (TP-FA) : TL
Electrical Connection
4
LOT No.
TL
12 3
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91212 TKIM/N0409SC TKIM TC-00002160 No. A1574-1/7