MCH6662 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : EN8999
MCH6662
SANYO Semiconductors
DATA SHEET
MCH6662
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance Nch : RDS(on)1=120mΩ(typ.)}
• _{1.8V drive}
• _{Halogen free compliance}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
Ratings
Unit
20
V
±10
V
2.0
A
8.0
A
0.8
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7022A-006
2.0
654
0.15
0 t o 0.02
1 23
0.65
0.3
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
XP
TL
123
654
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
Electrical Connection
6
5
4
1
2
3
Top view
http://semicon.sanyo.com/en/network
20812PE TKIM TC-00002705 No.8999-1/4