MCH6660_12 Datasheet, PDF (1/9 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1993A
MCH6660
SANYO Semiconductors
DATA SHEET
MCH6660
N-Channel and P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance Nch : RDS(on)1=105mΩ(typ.)}
Pch : RDS(on)1=205mΩ(typ.)
• _{1.8V drive}
• _{Halogen free compliance}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel P-channel
Unit
VDSS
20
--20
V
VGSS
ID
±10
±10
V
2
--1.5
A
IDP
PW≤10μs, duty cycle≤1%
PD
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
8
--6
A
0.8
W
Tch
150
°C
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7022A-006
2.0
654
0.15
MCH6660-TL-H
0 t o 0.02
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
XM
1 23
0.65
0.3
123
654
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
TL
Electrical Connection
6
5
4
1
2
3
http://semicon.sanyo.com/en/network
70412 TKIM/N0911PE TKIM TC-00002657 No. A1993-1/9