MCH6630 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENN8240
MCH6630
MCH6630
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{Low ON-resistance.}
• _{Ultrahigh-speed switching.}
• _{1.5V drive.}
• High resistance to damage from ESD (TYP 300V).
[with a protection diode connected between the gate and source]
• _{Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage (*1)
VGSS
10
V
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
ID
IDP
PW≤10µs, duty cycle≤1%
PD
Mounted on a ceramic board (900mm²!0.8mm) 1unit
Tch
0.7
A
2.8
A
0.8
W
150
°C
Storage Temperature
Tstg
--55 to +150
°C
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : WE
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=350mA
ID=350mA, VGS=4V
ID=200mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
min
30
0.4
0.45
Ratings
Unit
typ
max
V
1 µA
1 µA
1.3
V
0.8
S
0.7
0.9
Ω
0.8
1.15
Ω
1.6
2.4
Ω
30
pF
7
pF
3.5
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005PE TS IM TB-00001332 No.8240-1/4