MCH6626 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENN7918
MCH6626
N-Channel and P-Channel Silicon MOSFETs
MCH6626
General-Purpose Switching Device Applications
Features
• _{The MCH6626 incorporates an N-channel MOSFET}
and a P-channel MOSFET that feature low ON-
resistance and high-speed switching, thereby enabling
high-density mounting.
• _{Excellent ON-resistance characteristic.}
• _{2.5V drive.}
Package Dimensions
unit : mm
2173A
[MCH6626]
0.3
0.15
456
Specifications
Absolute Maximum Ratings at Ta=25°C
3 21
0.65
2.0
(Bottom view)
6 54
1 23
(Top view)
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel
P-channel
Unit
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm²!0.8mm)1unit
20
±10
1.6
6.4
0.8
150
--20
V
±10
V
--1.0
A
--4.0
A
W
°C
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : WA
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=0.8A
ID=0.8A, VGS=4V
ID=0.4A, VGS=2.5V
ID=0.1A, VGS=1.8V
Ratings
Unit
min
typ
max
20
V
1
µA
±10 µA
0.4
1.3
V
1.4
2.4
S
180
230 mΩ
220
310 mΩ
300
450 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93004 TS IM TA-10G0I98IM2 No.7918-1/6