MCH6616 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Ordering number : ENN7013
MCH6616
N-Channel Silicon MOSFET
MCH6616
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
• _{Low ON-resistance.}
unit : mm
• Ultrahigh-speed switching.
2173A
• 2.5V drive.
• Composite type with 2 MOSFETs contained in a single
package, facilitating high-density mounting.
[MCH6616]
0.3
0.15
456
3 21
0.65
2.0
6 54
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Specifications
Absolute Maximum Ratings at Ta=25°C
1 23
SANYO : MCPH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm²!0.8mm)1unit
Ratings
Unit
20
V
±10
V
1.6
A
6.4
A
0.8
W
150 °C
--55 to +150 °C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : FQ
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Conditions
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=0.8A
ID=0.8A, VGS=4V
ID=0.4A, VGS=2.5V
ID=0.1A, VGS=1.8V
min
20
0.4
1.6
Ratings
Unit
typ
max
V
1
µA
±10
µA
1.3
V
2.4
S
180
230 mΩ
220
310 mΩ
300
450 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71801 TS IM TA-3262 No.7013-1/4