MCH6602_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : EN6445C
MCH6602
SANYO Semiconductors
DATA SHEET
MCH6602
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{Low ON-resistance}
• _{Ultrahigh-speed switching}
• _{1.5V drive}
• _{Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
30
V
±10
V
0.35
A
1.4
A
0.8
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7022A-006
2.0
654
0.15
MCH6602-TL-E
0 t o 0.02
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
FB
1 23
0.65
0.3
123
654
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
TL
Electrical Connection
6
5
4
1
2
3
http://semicon.sanyo.com/en/network
71112 TKIM/12407 TIIM TC-00000415/70306/42806PE MSIM TB-00002288/30300 TS (KOTO) TA-2509 No.6445-1/7