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MCH6406 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications
Ordering number : ENN7297
Preliminary
Features
• Low ON-resistance.
• Ultrahigh-speed switcing.
• 4V drive.
MCH6406
N-Channl Silicon MOSFET
MCH6406
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2193A
[MCH6406]
0.3
0.15
456
Specifications
Absolute Maximum Ratings at Ta=25°C
3 21
0.65
2.0
(Bottom view)
6 54
1 23
(Top view)
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board(900mm2!0.8mm)
Ratings
Unit
30
V
±20
V
5
A
20
A
1.5
W
150
°C
--55 to +150
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : KF
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS= ±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=2.5A
ID=2.5A, VGS=10V
ID=1.2A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
min
30
1.2
2.8
Ratings
Unit
typ
max
V
1 µA
±10 µA
2.6
V
4
S
37
48 mΩ
63
88 mΩ
370
pF
85
pF
47
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83002 TS IM TA-100190 No.7297-1/4