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MCH5908_12 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – High-Frequency Amplifi er, AM Amplifier, Low-Frequency Amplifier Applications
Ordering number : ENA1218A
MCH5908
SANYO Semiconductors
DATA SHEET
MCH5908
N-Channel Silicon Junction FET
High-Frequency Amplifier, AM Amplifier,
Low-Frequency Amplifier Applications
Features
• Composite type with 2 J-FET contained in a MCPH5 package currently in use, improving the mounting
efficiency greatly
• The MCH5908 is formed with two chips, being equivalent to the 2SK3557, placed in one package
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
PT
Tj
Tstg
1 unit
Conditions
Ratings
Unit
15
V
--15
V
10 mA
50 mA
200 mW
300 mW
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7021A-009
2.0
5
4
MCH5908H-TL-E
0.15
MCH5908G-TL-E
0 to 0.02
1 23
0.65
0.3
123
5
4
1 : Drain1
2 : Source1/Source2
3 : Drain2
4 : Gate2
5 : Gate1
SANYO : MCPH5
Product & Package Information
• Package
: MCPH5
• JEITA, JEDEC
: SC-88A, SC-70-5, SOT-353
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
KR
A
N
K
TL
Electrical Connection
5
4
1
2
3
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91212 TKIM/22410AC TKIM TC-00002292 No. A1218-1/6