MCH5908 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications

Ordering number : ENA1218
MCH5908
SANYO Semiconductors
DATA SHEET
N-Channel Silicon Junction FET
MCH5908 ^{High-Frequency Amplifier, AM Amplifier,}
Low-Frequency Amplifier Applications
Features
• Composite type with 2 J-FET contained in a MCPH5 package currently in use, improving the mounting
efficiency greatly.
• The MCH5908 is formed with two chips, being equivalent to the 2SK3557, placed in one package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Voltage
Drain Current
Allowable Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
PT
Tj
Tstg
1 unit
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=--10μA, VDS=0V
Gate-to-Source Leakage Current
IGSS
VGS=--10V, VDS=0V
Cutoff Voltage
VGS(off) VDS=5V, ID=100μA
Drain Current
IDSS
VDS=5V, VGS=0V
The specifications shown above are for each individual J-FET.
* : The MCH5908 is classified by IDSS as follows (unit : mA).
Marking
KG
KH
Rank
G
H
IDSS(mA)
10 to 20
16 to 32
Ratings
Unit
15
V
--15
V
10 mA
50 mA
200 mW
300 mW
150
°C
--55 to +150
°C
min
--15
--0.3
10.0*
Ratings
Unit
typ
max
V
--1.0
nA
--0.7
--1.5
V
32.0* mA
Continued on next page.
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the performance, characteristics, and functions of the described products in the independent state, and are not
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22410AC TK IM TC-00002292 No. A1218-1/4