MCH5810 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications

Ordering number : ENN8194
MCH5810
MCH5810
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
DC / DC Converter Applications
Features
• _{Composite type with a P-Channel Sillicon MOSFET (MCH3335) and a Schottky Barrier Diode (SBS011)}
contained in one package facilitating high-density mounting.
• _[MOSFET]
• _{Low ON-resistance.}
• Ultrahigh-speed switching.
• 4V drive.
• _[SBD]
• Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage(*1)
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm²!0.8mm) 1unit
--30
V
--9
V
--0.4
A
--1.6
A
0.6
W
150
°C
Storage Temperature
Tstg
--55 to +125
°C
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
VRRM
VRSM
IO
IFSM
Tj
50Hz sine wave, 1 cycle
15
V
15
V
150 mA
3
A
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Marking : QK
(*1) : When designing a circuit using this product, that this P-channel MOSFET has a gate (oxide film) protection diode connected
only between its gate and source.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12505PE TS IM TB-00001111 No.8194-1/6