MCH3383_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – Low Voltage Drive Switching Device Applications

Ordering number : EN9000A
MCH3383
SANYO Semiconductors
DATA SHEET
MCH3383
P-Channel Silicon MOSFET
Low Voltage Drive Switching Device
Applications
Features
• _{ON-resistance RDS(on)1=57mΩ (typ.)}
• _{0.9V drive}
• _{Halogen free compliance}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Topr
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
--12
V
±5
V
--3.5
A
--14
A
1.0
W
150
°C
--5 to +150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7019A-003
MCH3383-TL-H
2.0
0.15
3
0 t o 0.02
1
2
0.65
0.3
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
Product & Package Information
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
QQ
TL
Electrical Connection
3
1
2
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53012TKIM/62211PE TKIM TC-00002604 No.9000-1/7