LE28FV4001M Datasheet, PDF (1/14 Pages) Sanyo Semicon Device – 4MEG (52488 x 8 Bits) Flash Memory

Ordering number : EN*5468
CMOS LSI
LE28FV4001M, T, R-20/25
4MEG (52488 × 8 Bits) Flash Memory
Preliminary
Overview
The LE28FV4001M, T, R Series are 4 MEG flash
memory products that feature a 542488-word × 8-bit
organization and 3.3 V single-voltage power supply
operation. CMOS peripheral circuits were adopted for
high speed, low power, and ease of use. The
LE28FV4001M also supports high-speed data rewriting
by providing a sector (256 bytes) erase function.
Package Dimensions
unit: mm
3205-SOP32
[LE28FV4001M. T, R]
Features
• Highly reliable 2 layer polysilicon CMOS flash
EEPROM process
• Read and write operations using a 3.3 V single-voltage
power supply
• High-speed access: 200 and 250 ns
• Low power
— Operating (read): 10 mA (maximum)
— Standby: 20 µA (maximum)
• Highly reliable read write
—Number of sector write cycles: 10⁴ cycles
— Data retention: 10 years
• Address and data latches
• Sector erase function: 256 bytes per sector
• Self-timer erase/program
• Byte program time: 35 µs (maximum)
• Write complete detection function: Toggle bit/Data
poling
• Hardware and software data protection functions
• Pin assignment conforms to the JEDEC byte-wide
EEPROM standard.
• Package
SOP 32-pin (525 mil) plastic package: LE28FV4001M
TSOP 42-pin (10 × 14 mm) plastic package:LE28FV4001T
TSOP 40-pin (10×14mm)plastic package: LE28FV4001R
unit: mm
3087A-TSOP40
[LE28FV4001M. T, R]
SANYO: SOP32
SANYO: TSOP40 (TYPE-I)
These FLASH MEMORY products incorporate technology licensed from Silicon Storage Technology, Inc.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22897HA(OT) No. 5468-1/14