LE28F4001M Datasheet, PDF (1/14 Pages) Sanyo Semicon Device – 4 MEG (524288 words x 8 bits) Flash Memory

Ordering number : EN*5239A
CMOS LSI
LE28F4001M, T, R-15/20
4 MEG (524288 words × 8 bits) Flash Memory
Preliminary
Overview
The LE28F4001 Series ICs are 524288-word × 8-bit flash
memory products that support on-board reprogramming
and feature 5 V single-voltage power supply operation.
CMOS peripheral circuits were adopted for high speed,
low power, and ease of use. These products support a
sector (256 bytes) erase function for fast data rewriting.
Features
• Fabricated in a highly reliable 2-layer polysilicon
CMOS flash EEPROM process.
• Read and write operation from a 5 V single-voltage
power supply
• Sector erase function: 256 bytes per sector
• Fast access time: 150/200 ns
• Low power
— Operating current (read): 25 mA (maximum)
— Standby current: 20 µA (maximum)
• Highly reliable read and write operations
— Sector write cycles: 10⁴ cycles
— Data retention time: 10 years
• Address and data latches
• Self-timer erase and programming
• Byte programming time: 35 µs (maximum)
• Write complete detection: Toggle bit and data polling
• Hardware and software data protection
• Pin assignment conforms to the JEDEC byte-wide
EEPROM standard
• Packages
SOP 32-pin (525 mil) plastic package :LE28F4001M
TSOP 40-pin (10 × 14 mm) plastic package :LE28F4001T
TSOP 40-pin (10 × 14 mm) plastic package :LE28F4001R
Package Dimensions
unit: mm
3205-SOP32
[LE28F4001M]
unit: mm
3087A-TSOP40
[LE28F4001T, R]
SANYO: SOP32
SANYO: TSOP40 (TYPE-I)
These FLASH MEMORY products incorporate technology licensed Silicon Storage Technology, Inc.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63096HA (OT) No. 5239-1/14