LE28F1101T-40 Datasheet, PDF (1/15 Pages) Sanyo Semicon Device – 1M(65536words×16bits) Flash EEPROM

Preliminary Specifications
CMOS LSI
LE28F1101T-40/45/55/70
1M(65536words×16bits) Flash EEPROM
Features
CMOS Flash EEPROM Technology
Single 5-Volt Read and Write Operations
Sector Erase Capability: 128word per sector
Fast Access Time: 40ns/45ns/55ns/70ns
Low Power Consumption
Active Current (Read): 50 mA (Max.)
Standby Current: 100 µA (Max.)
High Read/Write Reliability
Sector-write Endurance Cycles: 10⁴
10 Years Data Retention
Latched Address and Data
Self-timed Erase and Programming
Word Programming: 40µs (Max.)
End of Write Detection: Toggle Bit/ DATA Polling
Hardware/Software Data Protection
Packages Available
LE28F1101T : 40-pin TSOP Normal(10×14mm)
Product Description
The LE28F1101T is a 64K ×16 CMOS sector erase,
word program EEPROM. The LE28F1101T is manufactured
using SANYO's proprietary, high performance CMOS Flash
EEPROM technology. Breakthroughs in EEPROM cell
design and process architecture attain better reliability and
manufacturability compared with conventional approaches.
The LE28F1101T erases and programs with a 5-volt only
power supply.
LE28F1101T is offered in TSOP40 (10×14mm) packages.
Featuring high performance programming, LE28F1101
typically word programs in 30µs. The LE28F1101　typically
sector (128word) erases in 2ms. Both program and erase
times can be optimized using interface feature such as Toggle
bit or DATA Polling to indicate the completion of the write
cycle. To protect against an inadvertent write, the
LE28F1101T has on chip hardware and software data protec-
tion schemes. Designed, manufactured, and tested for a wide
spectrum of applications, the LE28F1101T is offered with a
guaranteed sector write endurance of 10⁴ cycles. Data reten-
tion is rated greater than 10 years.
technology makes possible convenient and economical up-
dating of codes and control programs on-line. The
LE28F1101T improves flexibility, while lowering the cost,
of program and configuration storage applications.
Figure 1 shows the pin assignments for the 40 lead
Plastic TSOP packages. Figure 2 shows the functional block
diagram of the LE28F1101T. Pin description and operation
modes can be found in Tables 1 through 3.
Device Operation
Commands are used to initiate the memory operation
functions of the device. Commands are written to the device
using standard microprocessor write sequences. A command
is written by asserting WE low while keeping CE low.
The address bus is latched on the falling edge of WE , CE ,
whichever occurs last. The data bus is latched on the rising
edge of WE , CE , whichever occurs first. However, during
the software write protection sequence the addresses are
latched on the rising edge of OE or CE , whichever occurs
first.
The LE28F1101T is best suited for applications that re-
quire reprogrammable nonvolatile mass storage of program
or data memory. For all system applications, the
LE28F1101T significantly improves performance and reli-
ability, while lowering power consumption when compared
with floppy diskettes or EPROM approaches. EEPROM
*This product incorporate technology licensed from Silicon Storage Technology, Inc.
This preliminary specification is subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Company
1-1, 1 Chome, Sakata, Oizumi-machi, Ora-gun, GUNMA, 370-0596 JAPAN
Revision 4.00-April 3, 2000-AY/ay-1/14