LE28C1001M Datasheet, PDF (1/14 Pages) Sanyo Semicon Device – 1MEG (131072 words x 8 bits) Flash Memory

Ordering number : EN*5129A
CMOS LSI
LE28C1001M, T-90/12/15
Preliminary
1MEG (131072 words × 8 bits) Flash Memory
Overview
The LE28C1001M, T series ICs are 1 MEG flash memory
products that feature a 131072-word × 8-bit organization
and 5 V single-voltage power supply operation. CMOS
peripheral circuits are adopted for high speed, low power
dissipation, and ease of use. A 128-byte page rewrite
function provides rapid data rewriting.
Features
• Highly reliable 2-layer polysilicon CMOS flash
EEPROM process
• Read and write operations using a 5 V single-voltage
power supply
• Fast access time: 90, 120, and 150 ns
• Low power dissipation
— Operating current (read): 30 mA (maximum)
— Standby current:
20 µA (maximum)
• Highly reliable read/write
— Erase/write cycles:
10⁴/10³ cycles
— Data retention:
10 years
• Address and data latches
• Fast page rewrite operation
— 128 bytes per page
— Byte/page rewrite time: 5 ms (typical)
— Chip rewrite time:
5 s (typical)
• Automatic rewriting using internally generated Vpp
• Rewrite complete detection function
— Toggle bit
— Data polling
• Hardware and software data protection functions
• All inputs and outputs are TTL compatible.
• Pin assignment conforms to the JEDEC byte-wide
EEPROM standard.
• Package
SOP 32-pin (525 mil) plastic package : LE28C1001M
TSOP 32-pin (8 × 20 mm)plastic package : LE28C1001T
Package Dimensions
unit: mm
3205-SOP32
[LE28C1001M]
unit: mm
3224-TSOP32
[LE28C1001T]
SANYO: SOP32
SANYO: TSOP32 (TYPE-I)
These FLASH MEMORY products incorporate technology licensed Silicon Storage Technology, Inc.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
D3096HA (OT)/N3095HA (OT) No. 5129-1/14