LE28BW168T Datasheet, PDF (1/20 Pages) Sanyo Semicon Device – 16 Megabit FlashBank Memory

16 Megabit FlashBank Memory
LE28BW168T
1
FEATURES:
• Single 3.0-Volt Read and Write Operations
• Separate Memory Banks by Address Space
– Simultaneous Read and Write Capability
• SuperiorReliability
– Endurance: 10,000 Cycles
– Data Retention: 10 years
• Low Power Consumption
– Active Current, Read:
– Active Current, Read & Write:
– Standby Current:
– Auto Low Power Mode Current:
10 mA (typical)
30 mA (typical)
5µA (typical)
5µA (typical)
• Fast Write Operation
– Bank Erase + Program:
– Block Erase + Program:
– Sector Erase + Program:
8 sec (typical)
500 ms (typical)
30 ms (typical)
• Fixed Erase, Program, Write Times
– Does not change after cycling
• Read Access Time
– 80/90 nsec
• Latched Address and Data
• End of Write Detection
– Toggle Bit
– Data # Polling
• Flash Bank: Two Small Erase Element Sizes
– 1K Words per Sector or 32K Words per Block
– Erase either element before Word Program
• CMOS I/O Compatibility
• Packages Available
– 48-Pin TSOP
• Continuous Hardware and Software Data
Protection (SDP)
Product Description
The LE28BW168T consists of two memory banks, 2 each
512K x 16 bits sector mode flash EEPROM manufactured
with SANYO's proprietary, high performance FlashTechnol-
ogy. The LE28BW168T writes with a 3.0-volt-only power
supply.
The LE28BW168T is divided into two separate memory
banks, 2 each 512K x 16 Flash banks. Each Flash bank is
typically used for program code storage and contains 512
sectors, each of 1K words or 16 blocks, each of 32K words.
The Flash banks may also be used to store data.
Any bank may be used for executing code while writing data
to a different bank. Each memory bank is controlled by
separate Bank selection address (A19) lines.
The LE28BW168T inherently uses less energy during Erase,
and Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, current,
and time of application. Since for any given voltage range, the
Flash technology uses less current to program and has a
shorter Erase time, the total energy consumed during any
Erase or Program operation is less than alternative flash
technologies. The Auto Low Power mode automatically
reduces the active read current to approximately the same as
standby; thus, providing an average read current of approxi-
mately 1 mA/MHz of Read cycle time.
The Flash technology provides fixed Erase and Program
times, independent of the number of erase/program cycles
that have occurred. Therefore the system software or hard-
ware does not have to be modified or de-rated as is necessary
with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated erase/program
cycles.
Device Operation
The LE28BW168T operates as two independent 8 Megabit
Word Pogram, Sector Erase flash EEPROMs.
All memory banks share common address lines, I/O lines,
WE#, and OE#. Memory bank selection is by bank select
address. WE# is used with SDP to control the Erase and
Program operation in each memory bank.
The LE28BW168T provides the added functionality of
being able to simultaneously read from one memory bank
while erasing, or programming to one other memory bank.
Once the internally controlled Erase or Program cycle in a
memory bank has commenced, a different memory bank can
be accessed for read. Also, once WE# and CE# are high
during the SDP load sequence, a different bank may be
accessed to read. LE28BW168T which selectes a bank by
a address. It can be used as a normal conventinal flash
memory when operats erase or program operation to only a
bank at non-concurrent operation.
The device ID cannot be accessed while any bank is writing,
erasing, or programming.
The Auto Low Power Mode automatically puts the
LE28BW168T in a near standby mode after data has been
accessed with a valid Read operation. This reduces the I_DD
active read current from typically 10mA to typically 5µA.
SANYO Electric Co.,Ltd. Semiconductor Company 1-1¹-1 Sakata Oizumi Gunma Japan
The Flash Bank product family was jointly developed by SANYO and Sillicon Storage Technology,Inc.(SST),under SST's technology license. This preliminary specification is subject to change without notice.
R.1.10(12/22/99) No.xxxx-1/20