LC3564RM Datasheet, PDF (1/10 Pages) Sanyo Semicon Device – 64K (8192 words x 8 bits) SRAM

Ordering number: EN 4484B
CMOS LSI
LC3564RM,RT-10LV/12LV/15LV
64K (8192 words × 8 bits) SRAM
Overview
The LC3564RM,RT are 8192-word × 8bit, asynchronous,
silicon gate, low-voltage CMOS SRAM LSIs.They oper-
ate from a 2.0 to 3.6V supply, making them ideal for hand-
held, battery-operated equipment.
They are fully CMOS devices employing 2-layer A1 wir-
ing to realize high-speed access, low operating current
consumption and very low standby current. They incorpo-
rate control signal inputs; OE for high-speed memory
access, and 2 chip enables CE1 and CE2 for power-down
and device selection.
They are ideal for systems requiring high speed, low
power and battry backup or for easy mamory expansion.
The very low standby current means that backup can also
be achieved using a capacitor.
s Common-pin input/outputs, 3-state output
s Clock not needed (fully-static RAM)
s Package
• SOP 28-pin (450mil) plastic package: LC3564RM
series
• TSOP 28-pin (8 × 13.4mm) plastic package:
LC3564RT series
Package Dimensions
unit: mm
3158 - SOP28
[LC3564RM]
Features
s Supply voltage range: 2.0 to 3.6V
• 3V operation: 2.7 to 3.6V
• Battery operation: 2.0 to 2.4V
s High-speed access time
• 3V operation
- LC3564RM,RT-10LV: 100ns (max)
- LC3564RM,RT-12LV: 120ns (max)
- LC3564RM,RT-15LV: 150ns (max)
• Battery operation
- LC3564RM,RT-10LV: 200ns (max)
- LC3564RM,RT-12LV: 250ns (max)
- LC3564RM,RT-15LV: 300ns (max)
sVery-low standby current
• 3V operation
- Ta ≤ 70°C: 1.0µA
- Ta ≤ 85°C: 3.0µA
• Battery operation
- Ta ≤ 70°C: 0.85µA
- Ta ≤ 85°C: 2.5µA
s Operating temperature range: –40 to +85°C
s Data retention supply voltage: 2.0 to 3.6V
s Input/output levels: CMOS Compatible (0.8Vcc/0.2Vcc)
s 3 control inputs (OE, CE1, CE2)
unit: mm
3221 - TSOP28
[LC3564RT]
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
60597HA(ID) / 50995TH(ID) / D2293JN No. 4484—1/10