JCH3101 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – PNP Epitaxial Planar Silicon Transistor For Automotive Audios

Ordering number : ENA0710
JCH3101
JCH3101 ^{PNP Epitaxial Planar Silicon Transistors}
For Automotive Audios
Features
• _{Adoption of MBIT processes.}
• _{High breakdown voltage and large current capacity.}
• _{High-speed switching.}
• _{High reliability. / Reliability test 2000 hours guarantee.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (600mm²âœ•0.8mm)
Ratings
Unit
--100
V
--100
V
--6
V
--1
A
--2
A
0.9
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking : 5A
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=--100V, IE=0A
VEB=--4V, IC=0A
VCE=--5V, IC=--100mA
VCE=--10V, IC=--100mA
VCB=--10V, f=1MHz
min
140
Ratings
Unit
typ
max
--100
nA
--100
nA
400
120
MHz
13
pF
Continued on next page.
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the performance, characteristics, and functions of the described products in the independent state, and are not
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customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
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22008EA TI IM TC-00001203 No. A0710-1/4