ISB-A40-0 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Ultrathin Miniature Package Reverse-Current Flow Prevention for a Cell Phone Charger Circuit SBD×4

Ordering number : EISB*0008
Ultrathin Miniature Package
ISB-A40-0 ^{Reverse-Current Flow Prevention}
for a Cell Phone Charger Circuit SBD×4
Overview
The ISB-A40-0 incorporates four chips of schottky barrier diodes that are necessary for preventing reverse-current flow
in charger circuits. This IC is optimal for high-density mounting and miniaturization of electronic products.
Applications
• Battery charger circuit for portable electronic devices
Features
• Incorporates two chips of 30V/1A and 30V/200mA, respectively.
• Miniature package makes this IC ideal for miniaturization of electronic devices and high-density mounting.
Specifications
Maximum Ratings at Ta = 25°C
Internal
Device
Parameter
Symbol
Conditions
D1, D2
Repetitive peak reverse voltage
VRRM
Average output current
IO
D3, D4
Repetitive peak reverse voltage
VRRM
Average output current
Allowable power dissipation
IO
PD-D1, 2
*
PD-D3, 4
*
Storage ambient temperature
Tstg
* Value of an element when mounted on a 40mm×40mm×1.0mm FR4 specified board.
Ratings
Unit
30
V
1.0
A
30
V
200 mA
0.55
W
0.4
W
-40 to +125
°C
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
80807HKIM No.0008-1/4