FX854 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – DC-DC Converter Applications

Ordering number:EN4894
FX854
MOSFET:P-Channel Silicon MOSFET
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type composed of a low ON-resistance P-
channel MOSFET for ultrahigh-speed switching and
low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates high-
density mounting.
· The FX854 is formed with 2 chips, one being
equivalent to the 2SJ190 and the other the SB05-05P,
placed in one package.
Package Dimensions
unit:mm
2119
[FX854]
Electrical Connection
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
Specifications
(Top view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
VDSS
VGSS
ID
IDP
PD
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Tc=25˚C
Mounted on ceramic board (750mm²Ã—0.8mm)
50Hz sine wave, 1cycle
· Marking:854
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
SANYO:XP6
(Bottom view)
Ratings
Unit
–60 V
±15 V
–1 A
–4 A
6W
1.5 W
150 ˚C
–55 to +150 ˚C
50 V
55 V
500 mA
5A
–55 to +125 ˚C
–55 to +125 ˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095TS (KOTO) TA-0116 No.4894-1/4