FX205 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Very High-Speed Switching Applications

Ordering number:EN4917
FX205
P-Channel Silicon MOSFET
Very High-Speed Switching Applications
Features
· Low ON-resistance.
· Very high-speed switching.
· Low-voltage drive.
Switching Time Test CIrcuit
Package Dimensions
unit:mm
2121
[FX205]
1:No Contact
2:Gate
3:Source
4:No Contact
5:Drain
6:Drain
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
PD
Tch
Storage Temperature
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Tc=25˚C
Mounted on ceramic board (750mm²Ã—0.8mm)
SANYO:XP5
(Bottom view)
Ratings
Unit
–60 V
±25 V
–2 A
–8 A
8W
2W
150 ˚C
–55 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
D-S Breakdown Voltage
G-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
· Marking:205
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| Yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=–1mA, VGS=0
IG=±100µs, VDS=0
VDS=–60V, VGS=0
VGS=±20V, VDS=0
VDS=–10V, I _D=–1mA
VDS=–10V, I _D=–1A
ID=–1A, VGS=–10V
ID=–1A, VGS=–4V
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=–2A, VGS=0
Ratings
Unit
min typ max
–60
V
±25
V
–100 µA
±10 µA
–1.5
–2.5 V
1.2
2
S
300 400 mΩ
450 650 mΩ
240
pF
150
pF
40
pF
12
ns
16
ns
85
ns
55
ns
–1.0 –1.5 V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/42895MO (KOTO) BX-1506 No.4917-1/3