FW906 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1809
FW906
SANYO Semiconductors
DATA SHEET
FW906
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• _{ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.)}
• _{4V drive}
• _{N-channel MOSFET + P-channel MOSFET}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel P-channel
Unit
VDSS
VGSS
ID
ID
ID
IDP
PD
PT
Tch
Duty cycle≤1%
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm²Ã—0.8mm) 1unit, PW≤10s
When mounted on ceramic substrate (2000mm²Ã—0.8mm), PW≤10s
30
±20
8
9
20
52
2.3
2.5
150
--30
V
±20
V
--6
A
--7
A
--15
A
--52
A
W
W
°C
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7005A-003
5.0
8
5
0.2
0.1
1
1.27
4
0.43
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Product & Package Information
• Package
: SOP8
• JEITA, JEDEC
: SC-87, SOT96
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type : TL
Marking
W906
TL
LOT No.
Electrical Connection
8
7
6
5
1
2
3
4
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72110PA TK IM TC-00002248 No. A1809-1/6