FW813 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1884
FW813
SANYO Semiconductors
DATA SHEET
FW813
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)1=39mΩ (typ.)}
• _{4V drive}
• _{Nch + Nch MOSFET}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (2000mm²Ã—0.8mm) 1unit, PW≤10s
When mounted on ceramic substrate (2000mm²Ã—0.8mm), PW≤10s
Ratings
Unit
60
V
±20
V
5
A
52
A
2.3
W
2.5
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7005A-003
5.0
8
5
0.2
0.1
1
1.27
4
0.43
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Product & Package Information
• Package
: SOP8
• JEITA, JEDEC
: SC-87, SOT96
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type : TL
Marking
W813
TL
LOT No.
Electrical Connection
8
7
6
5
1
2
3
4
http://semicon.sanyo.com/en/network
D0810PA TKIM TC-00002348 No. A1884-1/4