FW812 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1806
FW812
SANYO Semiconductors
DATA SHEET
FW812
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{Low ON-resistance}
• _{4V drive}
• _{Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW=10s)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
IDP
PD
PT
Tch
Tstg
Conditions
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm²Ã—0.8mm) 1unit, PW≤10s
When mounted on ceramic substrate (2000mm²Ã—0.8mm), PW≤10s
Ratings
Unit
35
V
±20
V
10
A
11.5
A
52
A
2.3
W
2.5
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7005A-003
5.0
8
5
0.2
0.1
1
1.27
4
0.43
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Product & Package Information
• Package
: SOP8
• JEITA, JEDEC
: SC-87, SOT96
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type : TL
Marking
W812
TL
LOT No.
Electrical Connection
8
7
6
5
1
2
3
4
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81110PA TK IM TC-00002270 No. A1806-1/4