FW513 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – MOSFET : N-Channel Silicon MOSFET FRD : Ultrahigh-Speed Switching Diode Switching Device Applications

Ordering number : ENA1870
FW513
SANYO Semiconductors
DATA SHEET
FW513
MOSFET : N-Channel Silicon MOSFET
FRD : Ultrahigh-Speed Switching Diode
General-Purpose Switching Device
Features
Applications
• _{FET RDS(on)=5.8Ω (typ.), 10V drive}
• _{FRD VF=1.1V (typ.), trr=40ns (typ.)}
• _{Nch MOSFET+FRD}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1000mm²Ã—0.8mm) 1unit
Ratings
Unit
600
V
±30
V
0.35
A
1.4
A
1.5
W
150
°C
--55 to +150
°C
Continued on next page.
Package Dimensions
unit : mm (typ)
7005A-009
5.0
8
5
0.2
0.1
1
1.27
4
0.43
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
SANYO : SOP8
Product & Package Information
• Package
: SOP8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type : TL
Marking
W513
TL
LOT No.
Electrical Connection
8
7
6
5
1
2
3
4
http://semicon.sanyo.com/en/network
N1710PB TKIM TC-00002515 No. A1870-1/5